, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon pnp power transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 2SB1507 description ? low collector saturation voltage :vce(sat)= -0.4(v)(max)@lc= -4a ? good linearity of hfe ? wide area of safe operation ? complement to type 2sd2280 applications ? designed for relay drivers, high-speed inverters, converters. absolute maximum ratings(ta=25 r ) symbol vcbo vceo vebo ic icm pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak collector power dissipation @ ta=25'c collector power dissipation tc-25 c junction temperature storage temperature range value -60 -50 -6 -7 -20 3 40 150 -55-150 unit v v v a a w ?c ?c ih iii pin 1 base | i | 2. collector iii 3. emitter ' to-3pml package iks t qi'd'. _ (cf\ 22 -'j a ?:? ji^d it"h 1 k il',.".t dim a b c d f g h j k l n (j r s li y z -*. c f f \~ u t vr_ i ?"? 4 . i - - e \ ?f 1*- .? . mm min 19.90 15.90 5.50 0.90 3.30 2.90 5.90 0.595 22.30 1.90 10.80 4.90 3.75 3.20 9.90 4.70 1.90 max 20.10 16.10 5.70 1.10 3.50 3.10 6.10 0.605 22.50 2.10 11.00 5.10 3.95 3.40 10.10 4.90 2.10 j .:v^i ?^i '^b q nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon pnp power transistor 2SB1507 electrical characteristics tc=25c unless otherwise specified symbol v(br)ceo v(br)cbo v(br)ebo vce(sat) icbo iebo hpe-1 hfe-2 fr parameter collector-emitter breakdown voltage collector-base breakdown voltage emitter-base breakdown voltage collector-emitter saturation voltage collector cutoff current emitter cutoff current dc current gain dc current gain current-gain ? bandwidth product conditions lc=-1ma; rbe= lc=-1ma;le=0 le=-1ma;lc=0 |c= -4a; ib= -0.4a vcb= -40v; ie= 0 veb= -4v; lc= 0 lc=-1a; vce=-2v lc= -5a; vce= -2v lc=-1a;vce=-5v min -50 -60 -6 70 30 typ. 10 max -0.4 -100 -100 280 unit v v v v na na mhz switching times ton lstg tf turn-on time storage time fall time lc=-2a; rl=10q, ib1= -\b2= -0.2a, vcc= -20v 0.2 0.7 0.1 f s u s u s hpe-1 classifications q 70-140 r 100-200 s 140-280
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